发送询价
光电二管(PIN)
新势力光电供应光电二管(PIN)，用于将光信号转换为电信号，形成光电效应/光电池。PIN 光电二管应用广泛，包括： 安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。
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UV/blue sensitive photodiodes
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|||||
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Type No.
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Active area
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Dark current
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Rise time
|
||
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Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS1-2
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TO52
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1.0x1.0
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1
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0.01
|
50
|
|
PS1-2
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LCC6.1
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1.0x1.0
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1
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0.01
|
50
|
|
PC5-2
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TO5
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Ø 2.52
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5
|
0.3
|
150
|
|
PS7-2
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TO5
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2.66x2.66
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7
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0.4
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200
|
|
PC10-2
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TO5
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Ø 3.57
|
10
|
1
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300
|
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PS13-2
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TO5
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3.5x3.5
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13
|
1
|
300
|
|
PS33-2
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TO8
|
5.7x5.7
|
33
|
2
|
600
|
|
PC50-2
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BNC
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Ø 7.98
|
50
|
5
|
1000
|
|
PS100-2
|
BNC
|
10x10
|
100
|
10
|
2000
|
|
PS100-2
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CERpin
|
10x10
|
100
|
10
|
2000
|
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Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
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|||||
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Blue/green sensitive photodiodes
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|||||
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Type No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC1-6b
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TO52S3
|
Ø 1.13
|
1
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0.05
|
10
|
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PC5-6b
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TO5
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Ø 2.52
|
5
|
0.1
|
20
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|
PS7-6b
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TO5
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2.7x2.7
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7
|
0.15
|
25
|
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PC10-6b
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TO5
|
Ø 3.57
|
10
|
0.2
|
45
|
|
PS13-6b
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TO5
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3.5x3.5
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13
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0.25
|
50
|
|
PS33-6b
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TO8
|
5.7x5.7
|
33
|
0.6
|
140
|
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PS100-6b
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CERpin
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10x10
|
100
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1
|
200
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PS100-6b
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LCC10S
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10x10
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100
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1
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200
|
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
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|||||
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High speed photodiodes (for fast rise times at low reverse voltages)
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|||||
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Type No.
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Active area
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Dark current
|
Rise time
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||
|
Chip
|
Package
|
Size
|
Area
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20V
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850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS0.25-5
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LCC6.1
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0.5x0.5
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0.25
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0.1
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0.4
|
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PS0.25-5
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TO52S3
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0.5x0.5
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0.25
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0.1
|
0.4
|
|
PC0.55-5
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TO52S1
|
Ø 0.84
|
0.55
|
0.2
|
1
|
|
PC0.55-5
|
LCC6.1
|
Ø 0.84
|
0.55
|
0.2
|
1
|
|
PS1-5
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LCC6.1
|
1.0x1.0
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1
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0.2
|
1.5
|
|
PS1-5
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TO52S3
|
1.0x1.0
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1
|
0.2
|
1.5
|
|
PS7-5
|
TO5
|
2.7x2.7
|
7
|
0.5
|
2
|
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PS11.9-5
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TO5
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3.45x3.45
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11.9
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1
|
3
|
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PC20-5
|
TO8
|
Ø 5.05
|
20
|
2
|
3.5
|
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PS33-5
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TO8
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5.7x5.7
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33
|
2
|
3.5
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PS100-5
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CERpinS
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10x10
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100
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2
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5
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PS100-5
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LCC10S
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10x10
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100
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2
|
5
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High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
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Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PS0.25-5t
|
LCC6.1
|
0.5x0.5
|
0.25
|
1
|
0.4
|
|
PC0.55-5t
|
LCC6.1
|
Ø 0.84
|
0.55
|
5
|
1
|
|
PC0.55-5t
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T1 3/4
|
Ø 0.84
|
0.55
|
5
|
1
|
|
PC0.55-5t
|
T1 3/4 black
|
Ø 0.84
|
0.55
|
5
|
1
|
|
PS1-5t
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LCC6.1
|
1.0x1.0
|
1
|
1
|
1
|
|
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
|
|||||
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Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC1-6
|
TO52S1
|
Ø 1.13
|
1
|
0.05
|
10
|
|
PC1-6
|
TO52S3
|
Ø 1.13
|
1
|
0.05
|
10
|
|
PC5-6
|
TO5
|
Ø 2.52
|
5
|
0.1
|
13
|
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
|
PC10-6
|
TO5
|
Ø 3.57
|
10
|
0.2
|
20
|
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
|
PC20-6
|
TO8
|
Ø 5.05
|
20
|
0.3
|
25
|
|
PC50-6
|
TO8S
|
Ø 7.98
|
50
|
0.5
|
30
|
|
PS100-6
|
BNC
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
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CERpinS
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
|
LCC10S
|
10×10
|
100
|
0.8
|
50
|
|
IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC5-7
|
TO8i
|
Ø 2.52
|
5
|
0.05
|
45
|
|
PC10-7
|
TO8i
|
Ø 3.57
|
10
|
0.1
|
50
|
|
PC20-7
|
TO8Si
|
Ø 5.05
|
20
|
0.2
|
50
|
|
PS100-7
|
LCC10
|
10×10
|
100
|
1.5
|
50
|
|
QP100-7
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LCC10
|
10×10
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4×25
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0.5
|
50
|
|
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
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150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP22-Q
|
TO8S
|
Ø 5.3
|
4×5.7
|
1.5
|
5
|
|
QP45-Q
|
TO8S
|
6.7×6.7
|
4×10.96
|
3
|
5
|
|
QP154-Q
|
TO1032i
|
Ø 14.0
|
4×38.5
|
10
|
6
|
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
|
|
Series-6b
|
400-650 nm
|
Blue / Green enhanced
|
Photometric illuminometer
|
|
Series-5b
|
360-550 nm
|
High-speed Epitaxy, blue / green enhanced
|
Optical fiber communication, high speed photometry
|
|
Series-5t
|
400-850 nm
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High-speed Epitaxy, low voltage (3.5V)
|
|
|
Series-5
|
450-950 nm
|
High-speed Epitaxy
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|
|
Series-6
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700-950 nm
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General purpose, low dark current, fast response
|
Precision photometry, analytical instruments
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|
Series-7
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700-1100 nm
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Low capacity, full depletable
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High energy physics
|
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Series-Q
|
900-1100 nm
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Enhanced NIR sensitivity, low voltage, full depletable
|
YAG laser detection
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Series-i
|
600-1700 nm
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InGaAs photodiodes, high IR sensitivity, low dark current
|
Eye-sate laser detection
|
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Series-X
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Ionizing radiation
|
With or without scintillator, ultra
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Medical, security, material
|
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